GaAs, (110) ori. un-doped, 5x5x5.5-5.6mm, 2sp In

GaAs, (110) ori. un-doped, 5x5x5.5-5.6mm, 2sp InGaAs single crystal wafer Growing Method: Orientation: (110) Flat: PF<110> SF <100> Size: 5x5x5. 5 5. 6mm Polishing: Two sides polished Doping: un doped Conductor type: S I Mobility: 4800 cm^2 V. S Resistivity :(1 9)x10^17 ohm. cm Carrier Concentration: 1. 3x10^7 cm^ 3 EPD: 1x10^4 cm^ 2 Ra(Average Roughness) : < 5 Angstrom (RMS) Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces

Size:     10x10x0

Digital display Digital display the speed in RPM/Hz

The testing software (TC5

( ohm-cm )

76 Array (Capacity):  3*3=9

9999 cycles

PTC Thermistor will break the current when heated to 120ºC

Cap Height: 4

TYPE:                                      NH20-20*20-15

One 120 mm ( 4

Fluorosilicone / FVMQ: Fluorosilicone (-75º to +400ºF) combines the good high and low-temperature stability of silicones with the fuel

Loss Tangent at 10 GHz: < 2x10-5  at A axis