GaAs (111)A orientation, Semi-Insulating, undoped, 10x10x 0.55mm, 1sp, Orientation 100 Doping: Sb doped

Doping:                          Sb doped

6mm Case Dimension

Diameter:    50

NO pressing powder with particle size LESS THAN 30 micron should be used

Cu coated SiO2/Si  Wafer (5x5 mm size)

GaAs (111)A orientation, Semi-Insulating, undoped, 10x10x 0.55mm, 1sp, Orientation 100 Doping: Sb dopedGaAs single crystal wafer Growing Method: VGF Orientation: (111)A Primary Flat: US(0 11); Secondary Flat: US(2 1 1) Size: 10X10 x 0. 55 mm Polishing: One side polished Doping: undoped Conductor type: Semi Insulating Resistivity:(1. 57 3. 86)E8 ohm. cm Carrier Concentration: N A Mobility: 4120 5860 cm^2 V. S EPD: N A Ra(Average Roughness) : < 0. 4 nm Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces