Ge Wafer (111) 2" dia x 0.5 mm, 2SP, P type ( Ga doped) resistivities: 0.005-0.01ohm-cm In

Ge Wafer (111) 2" dia x 0.5 mm, 2SP, P type ( Ga doped) resistivities: 0.005-0.01ohm-cm InGe Wafer Specification Growing Method: CZ Orientation: (111) + _0. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Polishing: Two sides epi polished Surface roughness: < 8 A ( by AFM) Doping: Ga Doped Conductor type: P type Resistivity: 0. 005 0. 01Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure:

MP300 is a hot mounting press to encapsulate samples for metallographic preparation

Note:  EPI ready wafers

Features CF40 (2

Cautions Please must always wear protection goggles during operation

Electricity requirement

-Size: (LxWxT) 20 mm x 15 mm x 0

50/60Hz (standard)

Note Spring for 1220 coin cell is not commercially available

Reads to 0

×(D/2)^2=3922

Thermal Conductivity:         640

Surface roughness: Ra <10A