Si Wafer (110), 2" dia x 0.5 mm, 1SP, N type, P doped, R: 1-10 ohm-cm Fe3O4 Surface finish (RMS or Ra):

Surface finish (RMS or Ra):  <10A

Do NOT use any crucible to carry the sample

but other materials used with it must be strictly dried

Primary Flat Length:      17 +/- 1 mm

and cooling rate

Si Wafer (110), 2" dia x 0.5 mm, 1SP, N type, P doped, R: 1-10 ohm-cm Fe3O4 Surface finish (RMS or Ra):Single crystal Silicon Conductive type: N type P doped Resistivity: 1 10 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 50. 8 diameter + 0. 5 mm x 0. 5 + 0. 025 mm Orientation: (110) + 1o Polish: one side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer