GaN Single Crystal Substrate,N-type, (10-10), 5 x10 x 0.3 mm , 1SP TGA and Lock clamps
$401.93
Description
and Lock clamps
8682 g/mol
Core Size: 76 mm (3 inches)
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Laminate strength
GaN Single Crystal Substrate,N-type, (10-10), 5 x10 x 0.3 mm , 1SP TGA and Lock clampsGaN single crystal substrates is made by a hydride vapor phase epitaxy (HVPE) based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. The large growth rate enables the growth of self supporting wafer thicknesses in a convenient time period. Specifications of Substrate Orientation: M axis (10 10) + 1. 0 o Type: N type(undoped) Nominal Thickness 300+ 25 microns Dimension: 5 mm x 10 mm +
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