GaAs Wafer , Growing Method: VGF ,(100) undoped Semi-Insulated 100mm D x0.6 mm, 1SP Cs Thermal conductivity: 270 mW /

Thermal conductivity:                          270 mW / cm

Other Metallic Foams

Note: By using 24mm and 15mm die

please choose coarse (63 microns ) diamond blade at related product below

Selectable infusion rate units: µL/min and mL/min

GaAs Wafer , Growing Method: VGF ,(100) undoped Semi-Insulated 100mm D x0.6 mm, 1SP Cs Thermal conductivity: 270 mW /GaAs single crystal wafer Growing Method: VGF Orientation: (100) Flat: (01 1) .(011) Size: 100 mm dia x 0. 6mm Polishing: one side polished Ra(Average Roughness) : < 0. 4 nm Doping: undoped Conductor type: Semi Insulating Resistivity: (0. 39 4. 75)E8 Ohm. cm Mobility: 4120 6820 cm^2 v. s. EPD: <5000 cm2 EPI ready surface and packing Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces