Si Wafer (100), 4" dia x 0.5 mm, 2SP, N-type, Undoped, resistivities: > 1000 ohm-cm - SiUa101D05C2R1000 Hydrothermal Reactors

Si Wafer (100), 4" dia x 0.5 mm, 2SP, N-type, Undoped, resistivities: > 1000 ohm-cm - SiUa101D05C2R1000 Hydrothermal ReactorsSingle crystal Si, Conductivity: Undoped Type: N Resistivity: > 1000 ohm CM Size: 4" diameter x 0. 5 mm Orientation: (100) Polish: two sides polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater

0017 W/cmK Refractive index (

Attention: If a gas cylinder is used instead of air compressor(pic2)

coating speed

Melting point: 1339 degree C

3 Installation Disk 1 pc 4 Alligator Clips for connecting a battery 8 pc

Carbon Content:

SrTiO3  Bi-Crystal substrate is made of two pieces oriented SrTiO3 crystal

It can set up an alarm based on requirement

0 (%) Cyclability

Application Laboratories And Research On Isolation Boxes Or Bead And Sand Blasting Boxes1 Pair

Surface roughness:             < 8 A

156 x 106 mm printing area with precision position adjustable at three-dimension and vacuum chunk to load and unload substrate easily