GaAs , Growing Method: VGF(100) Si doped, N-type, 2" dia x 0.5mm, 2sp,Carrier Concentration: (3.8-6.2) x 10^16 /cm^3 Li1.5Al0.5Ge1.5P3O12 g: standard gravity

g: standard gravity

oC 651 651 2047 1123 1325 1050 1950 Density

Detailed dimension drawing Warning Do NOT use an alumina tube under a vacuum at a temperature > 1500 °C

Such an alumina tube can be used at operating temperatures of 1700 oC in both oxidizing and reducing atmospheres

It proves inert to carbon and refractory metals in many severe situations

GaAs , Growing Method: VGF(100) Si doped, N-type, 2" dia x 0.5mm, 2sp,Carrier Concentration: (3.8-6.2) x 10^16 /cm^3 Li1.5Al0.5Ge1.5P3O12 g: standard gravityGaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 2" dia x 0. 5mm Polishing: two sides polished Doping: Si doped Conductor type: S C N Carrier Concentration: (3. 8 6. 4) x 10^16 cm^3 Mobility: (3450 4150) cm^2 V. S Resistivity: (2. 74 4. 24) E 2 ohm. cm EPD: < 5000cm^2 Ra(Average Roughness) : < 0. 4 nm EPI ready surface and packing Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces