InAs (111)A, undoped, N-type, 5mm x5mm x 0.45mm 1sp SiO2
$90.85
Description
InAs (111)A, undoped, N-type, 5mm x5mm x 0.45mm 1sp SiO2Growth method LEC Orientation (111)A 0. 5 Deg Orientation Flat SEMI Doping Undoped Conductivity type N type Carrier Concentration <2E16 cm 3 Mobility >23400 cm2 V. S EPD <10000 cm 2 Resistivity: 1. 3x10^ 2 ohm. cm Standard thickness 450 25 mm Size: 5 mm x 5mm Polish one side polished Related Product Other InAs InSb InP GaAs GaSb Wafer Box Film Coater RTP Furnaces
die is inside
mildly acidic and oxygenated solvents
Tolerance of size
Size: 10x10x 0
please order the item from on-line by credit card only
QTY 50 x 1
the system will automatically resume those stopped channels and ensure that the test is normally conducted
Polishing: one side polished
Optical Transparency: > 78% @ 555nm
Quartz Tube Dimension:60 OD × 53
This die is designed for making 4" sputtering target
NPT-Female
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