Thermal Oxide Wafer: 100 nm SiO2 on Si (100), 5x5 x 0.5 mm, N type, As-doped, 1SP, R: 0.001-0.005 ohm.cm Target A-Z KF25 ports

KF25 ports

Two fibrous ceramic tube blocks are included

Cutting Blade

instead loading sample directly inside tube

18mm Coating The positive side of the casing is coated with aluminum Al coating thickness < 0

Thermal Oxide Wafer: 100 nm SiO2 on Si (100), 5x5 x 0.5 mm, N type, As-doped, 1SP, R: 0.001-0.005 ohm.cm Target A-Z KF25 portsThermal oxide Layer SiO2 layer on Silicon wafer Oxide layer thickness: 100 nm ( 1000A) + 10% Refractive index 1. 455 Silicon Wafer Specifications: Conductive type: N type As dped Resistivity: 0. 001 0. 005 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 5x5 x 0. 5 mm Orientation: (100) + 1o Polish: one side polished Surface roughness, Ra: < 5A (RMS) Related