InSb (100) 2" dia x 0.5 mm, Te doped, N type, 2 side polished Additive

InSb (100) 2" dia x 0.5 mm, Te doped, N type, 2 side polished Additive2" InSb wafer (N type, Te Doped ) Size: 2" dia x 0. 5 (+ 0. 025 ) mm thick Orientation: <100> + 0. 5 o Polishing: two sides polishd Packing: Sealed in nitrogen in single wafer container at 100 class clean room Properties Growth method LEC Orientation (100) + 0. 5 o Orientation Flat Two reference flates at <100> Doping Te Conductivity type N type Carrier Concentration (@77 K) (2 6)E17 cc @77K Mobility (cm^2 Vs) (@77K): 3. 9E 4 EPD ( cm^2) < 200

3 (IMDG)Road

Both Front and Backside Epiwafer polishing with Ra or RMS < 5 Angstrom

Resistivity:                      0

12 mm diameter wire is easy to break

Polishing:                                     Fine ground

8  x10-6/ K // a

70 m3/h The rotation speed at 50 Hz 1500 RPM The rotation speed at 60 Hz 1800 RPM Switch Yes

40KHz - MSK-800W

9% pure stranded copper for maximum conductivity

100 pairs of CR2032 button cell cases

Crystal growth direction

Carrier Concerntration:        (1