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Ge Wafer (110) N-type Undoped, 2" dia x 0.5 mm, 1SP, R:>50 ohm.cm Metal Foils Please click picture right to
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Ge Wafer (110) N-type Undoped, 2" dia x 0.5 mm, 1SP, R:>50 ohm.cm Metal Foils Please click picture right to
$137.97
Description
Please click picture right to order other battery accessories
BOW: <=20 um
Polyamide (JIS Z1714): 0
The pressing die is suggested to be used with particle size < 30 mircon
Tube Furnaces
Ge Wafer (110) N-type Undoped, 2" dia x 0.5 mm, 1SP, R:>50 ohm.cm Metal Foils Please click picture right toGe Wafer Specification Growing Method: CZ Orientation: (110) + _0. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Polishing: one side optical polished Surface finish (RMS or Ra) : < 30A Doping: Undoped Conductor type: N type Resistivity: > 50Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) EPD: < 5E2 cm^2 Package: under 1000 class clean room Typical Properties:
Shipping Notes
- Free Standard Shipping on $100+ Orders to the USA.
- Except Preorder products are shipped in 48 hours.
- Delivery to the USA:
- Standard Shipping : 3-10 business days
- If time is of the essence, please consider selecting expedited delivery for faster service.
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