50 ohm-cm, 2SP - GEUa50D05C2R50US GaN Single Crystal Resistivity: >50 Ohms/cm (If youGe Wafer Specification Growing Method: CZ Orientation: (100) + _0. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Polishing: Two sides epi polished Surface roughness: RMS or Ra:~ 10 A( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure:"> 50 ohm-cm, 2SP - GEUa50D05C2R50US GaN Single Crystal Resistivity: >50 Ohms/cm (If you"> 50 ohm-cm, 2SP - GEUa50D05C2R50US GaN Single Crystal Resistivity: >50 Ohms/cm (If youGe Wafer Specification Growing Method: CZ Orientation: (100) + _0. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Polishing: Two sides epi polished Surface roughness: RMS or Ra:~ 10 A( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure:"> 50 ohm-cm, 2SP - GEUa50D05C2R50US GaN Single Crystal Resistivity: >50 Ohms/cm (If you"> 50 ohm-cm, 2SP - GEUa50D05C2R50US GaN Single Crystal Resistivity: >50 Ohms/cm (If youGe Wafer Specification Growing Method: CZ Orientation: (100) + _0. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Polishing: Two sides epi polished Surface roughness: RMS or Ra:~ 10 A( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure:"> Ge Wafer (100) Undoped, 2" dia x 0.5 mm, resistivities: >50 ohm-cm, 2SP - GEUa50D05C2R50US GaN Single Crystal Resistivity: >50 Ohms/cm (If you – vastrahamnen.se

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Ge Wafer (100) Undoped, 2" dia x 0.5 mm, resistivities: >50 ohm-cm, 2SP - GEUa50D05C2R50US GaN Single Crystal Resistivity: >50 Ohms/cm (If you

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50 ohm-cm, 2SP - GEUa50D05C2R50US GaN Single Crystal Resistivity: >50 Ohms/cm (If you">
Description

Resistivity:                   >50 Ohms/cm (If you would like to measure the resistivity accurately

The magnetic fluid sealed inline swivel prevents gas/vacuum / electrical lines twisting in the event of KF50 flange rotation

Easy to load and remove tube block

20 microns diamond particle for effectively cutting and slicing of ceramic and crystal

Warning: This glove box is not suitable for Li-ion battery research because the humidity cannot be lowered to 10ppm

Ge Wafer (100) Undoped, 2" dia x 0.5 mm, resistivities: >50 ohm-cm, 2SP - GEUa50D05C2R50US GaN Single Crystal Resistivity: >50 Ohms/cm (If youGe Wafer Specification Growing Method: CZ Orientation: (100) + _0. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Polishing: Two sides epi polished Surface roughness: RMS or Ra:~ 10 A( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure:

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