VGF-Ge Wafer(100) . 100 mmdia x 0.175 mm, 1SP, P type ( Ga doped) active surface area 50 cm2 100 - 1000 (upon request)

100 - 1000 (upon request)

If the liquid is spilled on the unit

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the transparency is >=75% and haze is 3%

~25 microm

VGF-Ge Wafer(100) . 100 mmdia x 0.175 mm, 1SP, P type ( Ga doped) active surface area 50 cm2 100 - 1000 (upon request)Ge Wafer Specification Growing Method: VGF Orientation: (100) + 0. 5 Deg. Wafer Size: 100(+ 0. 4) mm dia x 175(+ 25) microns Surface Polishing: One side polished Surface roughness: < 8 A Doping: Ga Doped Conductor type: P type Resistivity: (0. 182 0. 327) Ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Carrier Concentration: (0. 92 4. 13) E16 c. c Mobility: (1520