InSb (100) 10x10x 0.5mm, Undoped, N type, 2 sides polished LaAlO3 Epitaxial Film Thickness
$125.92
Description
Epitaxial Film Thickness
Jar Material: Corundum
Use the MSK-118A folding machine to partially fold the edge
Mobility: 1630- 1870cm^2/V
Crystal growth direction
InSb (100) 10x10x 0.5mm, Undoped, N type, 2 sides polished LaAlO3 Epitaxial Film ThicknessInSb substrate (N type, undoped) 2sp Size: 10 x 10 x 0. 5 mm Orientation <100> + 0. 5o Polishing: both sides epi polished Packing: Sealed under nitrogen with single wafer comtainer in 1000 class clean room Properties Growth method LEC Orientation (100) + 0. 5o Doping Undoped Conductivity type N type Carrier Concentration (2 7)E14 @77K Mobility 4E4 cm2 Vs EPD <300 cm 2
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