GaAs, Growing Method: VGF (111)B, Si-doped, 2" dia x 0.35mm, 2sp - GASicB50D035C2US Cathode Casing: SS304 or SS316

Casing: SS304 or SS316

MTI will replace the unsatisfied substrate which has no film grown and no damage free of charge until you are satisfied within 15 days after receiving it

Conductor type:                 S-C-P

2KW Power requirement AC 220 V +/- 10%

Used to Indicate & Manually control Air or Gas flow Max 2000 cc/min

GaAs, Growing Method: VGF (111)B, Si-doped, 2" dia x 0.35mm, 2sp - GASicB50D035C2US Cathode Casing: SS304 or SS316GaAs single crystal wafer Growing Method: VGF Orientation: (111)B Primary Flat: EJ(0 11)+ 0. 5 deg; Secondary Flat: EJ( 211) Size: 2" dia x 0. 35mm Polishing: Two sides polished Doping: Si doped Conductor type: S C N Resistivity:(1. 5 4. 1)E 3 ohm. cm Carrier Concentration: (0. 6 2. 4)x10^18 c. c Mobility: 1750 2450 cm^2 V. S EPD: N A Ra(Average Roughness) : < 0. 4 nm Note: EPI ready wafers