GaAs Wafer - Growing Method: VGF (100) P type Zn doped , 3"x0.625 mm, 1sp Ceramic & Glass Substrate A-Z Timer 1 - 999 minutes

Timer 1 - 999 minutes adjustable timer Dimensions Weight of shipment 50lbs Operation Application Notes  Suitable for MTI polishing machine or any brand automatic polisher

Install exhaust valve (outlet) on the other end of tube flange

Such professional-grade diamond blades last longer and cut faster than ordinary notched-rim or plated-diamond blades

Pocket Size(mil):    L180*W150*D36 Pocket Size(mm):   L4

one KF25 vacuum port

GaAs Wafer - Growing Method: VGF (100) P type Zn doped , 3"x0.625 mm, 1sp Ceramic & Glass Substrate A-Z Timer 1 - 999 minutesGaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 3" dia x 0. 625 mm Polishing: one side polished Doping: Zn doped Conductor type: S C P Carrier Concentration: (0. 74 3. 60) x 10^19 cm^3 Mobility: 59 88 cm^2 V. S EPD: < 5000 cm^2 resistivity: (2. 92 9. 70)x10^ 3 ohm. cm Note: EPI ready wafers Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces