+ 0. 5 o Polishing: one side polishd Packing: Sealed in nitrogen in single wafer container at 100 class clean room Properties Growth method LEC Orientation (100) + 0. 5 o Orientation Flat Two reference flates at <100> Doping Te Conductivity type N type Carrier Concentration (@77 K) (0. 19 0. 50)E18 cc @77K Resistivities (ohm cm): 0. 0005 0. 001 Mobility"> + 0. 5 o Polishing: one side polishd Packing: Sealed in nitrogen in single wafer container at 100 class clean room Properties Growth method LEC Orientation (100) + 0. 5 o Orientation Flat Two reference flates at <100> Doping Te Conductivity type N type Carrier Concentration (@77 K) (0. 19 0. 50)E18 cc @77K Resistivities (ohm cm): 0. 0005 0. 001 Mobility"> + 0. 5 o Polishing: one side polishd Packing: Sealed in nitrogen in single wafer container at 100 class clean room Properties Growth method LEC Orientation (100) + 0. 5 o Orientation Flat Two reference flates at <100> Doping Te Conductivity type N type Carrier Concentration (@77 K) (0. 19 0. 50)E18 cc @77K Resistivities (ohm cm): 0. 0005 0. 001 Mobility"> InSb (100) 2" dia x 0.45 mm, Te doped, N type, 1 side polished - ISTea50D045C1US Sc 99% (horizontal polymer strip is – vastrahamnen.se

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InSb (100) 2" dia x 0.45 mm, Te doped, N type, 1 side polished - ISTea50D045C1US Sc 99% (horizontal polymer strip is

$931.50

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Description

99% (horizontal polymer strip is made of modified polypropylene (PP) and  polyethylene naphthalate (PEN)) Length 61mm Width 4mm Thickness 0

Specifications Dimensions (Dia x Height) Case: 16

Dimension:20mm x 20mm x 3

44" (63mm) Inside Diameter 32  mm  ( 1

Used for DHG-9070 serious Gravity Convection Oven

InSb (100) 2" dia x 0.45 mm, Te doped, N type, 1 side polished - ISTea50D045C1US Sc 99% (horizontal polymer strip is2" InSb wafer (N type, Te Doped ) Size: 2" dia x 0. 45 (+ 0. 025 ) mm thick Orientation: <100> + 0. 5 o Polishing: one side polishd Packing: Sealed in nitrogen in single wafer container at 100 class clean room Properties Growth method LEC Orientation (100) + 0. 5 o Orientation Flat Two reference flates at <100> Doping Te Conductivity type N type Carrier Concentration (@77 K) (0. 19 0. 50)E18 cc @77K Resistivities (ohm cm): 0. 0005 0. 001 Mobility

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