GaN , N-type , Si doped (0001) 10x10.5x0.35mm,2sp Feeders Growing Method: VGF

Growing Method:                 VGF

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Model EQ-Die-75D Die Sleeve Height 2 3/8" (60 mm) Inner Diameter 3" (76

} Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container

Polishing:  Two sides polished

GaN , N-type , Si doped (0001) 10x10.5x0.35mm,2sp Feeders Growing Method: VGFGaN single crystal substrates is made by a hydride vapor phase epitaxy (HVPE) based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. The large growth rate enables the growth of self supporting wafer thicknesses in a convenient time period. Specifications of the Substrate Orientation: c axis (0001) + 1. 0 o Nominal Thickness 350+ 25 microns Dimension: 10 mm x 10. 5 mm + 0. 5 mm Bow <5