Si (100) 1" dia x 0.5mm, 1SP, N type P doped, R: 1-10 ohm-cm - SIPa25D05C1R1 S Surface: as cut

Surface:            as cut

Note: Air Compressor is not included

2mm) in diameter  x 0

Sapphire ( single crystal of Al2O3 ) is being used extensively as a substrate for III-V nitrides and for many other epitaxial films

Resistivity:  60 ohm/sq

Si (100) 1" dia x 0.5mm, 1SP, N type P doped, R: 1-10 ohm-cm - SIPa25D05C1R1 S Surface: as cutSpecifications: Single crystal: Si Conductive type: N type, P doped Size: 1" diameter x 0. 5mm Orientation: (100) resistivities: 1 10 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Polish: one side polished Surface roughness: < 5A RMS Related Products Other Crystal Wafer A Z Plasma Cleaner Wafer Containers Dicing Saw Film Coater