Ge Wafer (100) with major flat <110> 100mm dia x 0.5 mm, 1SP, N type (Sb doped) R:0.1-0.5 ohm.cm - GESba100D05C1BeR01US5 Black Phosphorus Bulk density (g/ml)

Bulk density (g/ml)

Operation Video   Application Notes Corrosive liquid (such as LiPF6 electrolyte) must be remain sealed in a container inside the glove box

Specifications Material Stainless Steel 304 with the Aluminum coating:

240mm(L) x 240mm(W) x 200mm(H) (10"x10"x 8")  (11

Substrate orientation:    highly oriented layer structure along <0001>

Ge Wafer (100) with major flat <110> 100mm dia x 0.5 mm, 1SP, N type (Sb doped) R:0.1-0.5 ohm.cm - GESba100D05C1BeR01US5 Black Phosphorus Bulk density (g/ml)Ge Wafer Specification Growing Method: CZ Orientation: (100) + (0. 21 0. 25) Deg. Major Flat: <110> + (0. 11 0. 19) Deg. Wafer Size: 100mm dia x 500 microns Surface Polishing: One side epi polished Surface roughness: < 5 A ( by AFM) Doping: Sb Doped Conductor type: N type Resistivity: 0. 1 0. 5 Ohms. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) EPD: <500 cm^2 Package: