Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,1sp, Film: 0.5 um thick Saws Polished surface: substrate surface is

Polished surface:   substrate surface is EPI polished via a special CMP procedure with Ra < 5 A

Weight       12Oz (340 grams) Operation Temperature  Charging:       0 - 45 oC (32 - 113 o F)

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Demo Video How to Make Cylindial Cell

Easy to load and remove tube block

Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,1sp, Film: 0.5 um thick Saws Polished surface: substrate surface isSilicon on sapphire (SOS) is a hetero epitaxialprocess for integrated circuitmanufacturing that consists of a thin layer (typically thinner than 0. 6 micrometres) of silicongrown on a sapphire (Al2O3) wafer. SOS is part of the Silicon on Insulator (SOI) family of CMOS technologies. SOS is primarily used in aerospace and militaryapplications because of its inherent resistance to radiation. U. S. Dept. of Commerce requires End User Certificate for