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Si Wafer (100), 5 " dia x 0.625mm, 1SP N-type ,P- doped, R:1-10 ohm-cm, bi Typical Operation Procedures for Controlling
Si Wafer (100), 5 " dia x 0.625mm, 1SP N-type ,P- doped, R:1-10 ohm-cm, bi Typical Operation Procedures for Controlling
$94.64
Description
Typical Operation Procedures for Controlling the Pressure of Tube Furnace Install feed valve (inlet) on one end of tube flange
Type: SP3-10025
Make wet film thickness between 0 - 3000 microns
controller's PCB (The number of the modules to be supplied will be dependent on the heating zones of the furnace)
No Electric part inside for safe operation
Si Wafer (100), 5 " dia x 0.625mm, 1SP N-type ,P- doped, R:1-10 ohm-cm, bi Typical Operation Procedures for ControllingSingle crystal Si, Conductivity: N type ( P doped) Size: 5" diameter x 0. 625 mm Orientation: (100) Resistivity: 1 10 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Polish: One side polished Surface roughness: < 5A Packing : In single wafer carrier box Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma
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