+ 0. 5 degree Dimension: 4"( + 0. 015'')Dx0. 35mm( + 25um) Polished: two sides epi polished Surface Roughness: < 10 A by AFM Please click here to identify the Si face from C of this double side polished wafers Typical Properties of Single Crystal SiC Formula weight: 40. 10 Unit Cell: Hexagonal Lattice constant: a =3. 07 A c = 10. 53 A Stacking sequence: ABCB (4H) Orientation: (0001) Polishing :"> + 0. 5 degree Dimension: 4"( + 0. 015'')Dx0. 35mm( + 25um) Polished: two sides epi polished Surface Roughness: < 10 A by AFM Please click here to identify the Si face from C of this double side polished wafers Typical Properties of Single Crystal SiC Formula weight: 40. 10 Unit Cell: Hexagonal Lattice constant: a =3. 07 A c = 10. 53 A Stacking sequence: ABCB (4H) Orientation: (0001) Polishing :"> + 0. 5 degree Dimension: 4"( + 0. 015'')Dx0. 35mm( + 25um) Polished: two sides epi polished Surface Roughness: < 10 A by AFM Please click here to identify the Si face from C of this double side polished wafers Typical Properties of Single Crystal SiC Formula weight: 40. 10 Unit Cell: Hexagonal Lattice constant: a =3. 07 A c = 10. 53 A Stacking sequence: ABCB (4H) Orientation: (0001) Polishing :"> SiC - 4H on axis <0001>+/- 0.5 degree 4" dia. x0.35 mm thick. Semi-Insulating two sides polished (Si side EPI- polished)-1 Feeders Efficient cooling system and Maintenance-free – vastrahamnen.se

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SiC - 4H on axis <0001>+/- 0.5 degree 4" dia. x0.35 mm thick. Semi-Insulating two sides polished (Si side EPI- polished)-1 Feeders Efficient cooling system and Maintenance-free

$2022.64

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Efficient cooling system and Maintenance-free

igloss    %<

Size:            1/4" x 1/4" x 0

6 for detail

Conductor type:                S-C-N

SiC - 4H on axis <0001>+/- 0.5 degree 4" dia. x0.35 mm thick. Semi-Insulating two sides polished (Si side EPI- polished)-1 Feeders Efficient cooling system and Maintenance-freeSpecifications of Substrate Orientation: on axis <0001>+ 0. 5 degree Dimension: 4"( + 0. 015'')Dx0. 35mm( + 25um) Polished: two sides epi polished Surface Roughness: < 10 A by AFM Please click here to identify the Si face from C of this double side polished wafers Typical Properties of Single Crystal SiC Formula weight: 40. 10 Unit Cell: Hexagonal Lattice constant: a =3. 07 A c = 10. 53 A Stacking sequence: ABCB (4H) Orientation: (0001) Polishing :

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