LaAlO3, (100) Orn. EPI polishing 3" x 0.5mm wafer 2 SP --- Qty discounted! Rolling Presses Application Note Place the grinder

Application Note Place the grinder on a firm platform and isolated room to avoid noise

Using spacers to make gang saw

Operation Instructions & Videos

Features 100 microns Ultra-thin diamond blade with 100 mm O

5m2/g Capacity @ 0

LaAlO3, (100) Orn. EPI polishing 3" x 0.5mm wafer 2 SP --- Qty discounted! Rolling Presses Application Note Place the grinderLaAlO3 single crystal provides a good lattice match to many materials with perovskite structure. It is an excellent substrate for the epitaxial growth of high Tc superconductors and magnetic and ferroelectric thin films. The dielectric properties of LaAlO3 crystal are well suitable for low loss microwave and dielectric resonance applications. Substrate Specifications: Wafer Size: 3" dia + 0. 5 mm x 0. 5 thickness + 0. 05 mm Wafer Orientation: (100) +