GaAs (111)B orientation, Semi-Insulating, undoped, 10x10x 0.625mm, 1sp, BaF2

GaAs (111)B orientation, Semi-Insulating, undoped, 10x10x 0.625mm, 1sp, BaF2GaAs single crystal wafer Growing Method: VGF Orientation: (111)B Primary Flat: EJ(0 11)+ 0. 5 deg; Secondary Flat: EJ( 211) Size: 10X10 x 0. 625mm Polishing: One side polished Doping: undoped Conductor type: Semi Insulating Resistivity:(1. 57 3. 86)E8 ohm. cm Carrier Concentration: N A Mobility: (4120 5860) cm^2 V. S EPD: N A Ra(Average Roughness) : < 0. 4 nm Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces

MTI supplies high quality hot pressed Alumina cutting blades with 8" diameter x 0

Conductivity @800:   >0

Top Cap: 15

an Air-tight sample holder will include one zero diffraction plate )

other size coin cell

Steel frame with tempered glass front & side panel

Lattice constant at room temperature :   0

BNC-J3 Female to SMA-J3 Female Cable

One Scraper is included to apply printable material

MTI supplies high quality sintered diamond blades for precision cutting or dicing of various crystals and crystalline oxides

BK7-  glass substrates

Used to Indicate & Manually control Air or Gas flow Max 2000 cc/min