Si Wafer (111), 4 " dia x 0.3 mm, N Type P doped, 1SP, Resistivities: 15,000 - 25,000 ohm-cm Coin Cell Battery No power source is available

No power source is available inside the glove box and the customer needs to extend the power cord to the outside of the glovebox

and customer’s responsibility

Surface Polishing:                 Two sides optical polished

Chips will have passivation layer

200g (50 pcs)

Si Wafer (111), 4 " dia x 0.3 mm, N Type P doped, 1SP, Resistivities: 15,000 - 25,000 ohm-cm Coin Cell Battery No power source is availableSingle Crystal: Si Growth Method: FZ (Floating Zone) Type Dopant: N Phosphorus Orientation: (111) Resistivity: 15,000 25,000 ohm cm Diameter: 100 mm + 0. 5 mm Thickness: 0. 3 mm + 0. 025 mm Primary Flat: <110> Polish: One side polished Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater