Si Wafer (100), 4 " dia x 0.525 mm, 1SP, P Type, B doped, resistivities: 0.001-0.005 ohm-cm DyScO3 Application Notes If you are

Application Notes If you are going to make CR2016

Dimension: 100 x 100 x 3

which allows the glove box to vacuum the chamber to remove moisture and oxygen without expensive inert gas purging

Growing Method:       VGF

Z-axis: < 5'       X-axis and Y-axis: < 10'

Si Wafer (100), 4 " dia x 0.525 mm, 1SP, P Type, B doped, resistivities: 0.001-0.005 ohm-cm DyScO3 Application Notes If you areSingle crystal: Si, Prime Grade Conductivity: P type B doped Resistivity: 0. 001 0. 005ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 4" diameter x 0. 525 (+ 0. 025) mm Orientation: (100) + 0. 5 deg Polish: One side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma