Ge Single Crystal Substrate, P-type, Ga-doped (100), 10x10x0.5mm 2sp, R:0.1-0.5 ohm.cm Ce 3o) with Standard Flat

3o) with Standard Flat

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1/4 BSPP or M14  to KF-16 port

Ge Single Crystal Substrate, P-type, Ga-doped (100), 10x10x0.5mm 2sp, R:0.1-0.5 ohm.cm Ce 3o) with Standard FlatGe Wafer Specification Growing Method: CZ Wafer Size: 10 x 10 x0. 5 mm Surface Polishing: two sides epi polished Orientation: (100) Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Ga doped Conductor type: P type Resistivity: 0. 1 0. 5 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other