GaAs Wafer - Growing Method: VGF (100) Zn doped Ptype, , 2"x0.35 mm, 1sp, CC: (2.67-3.27) x 10^18 /cm^3 Thermal Evaporation TTV <10 microns

TTV                                <10 microns

Orientation:                  <010> +/-1°

Brand new laptop ( 4GB RAM 128GB SSD) with MS Windows 10 and the latest version testing software is installed and calibrated for immediate use

This aluminum foil with 12 um thickness is used as substrate (Al current collectors) for coating cathode materials in Li-Ion rechargeable battery research

ServiceLife 2000 hours

GaAs Wafer - Growing Method: VGF (100) Zn doped Ptype, , 2"x0.35 mm, 1sp, CC: (2.67-3.27) x 10^18 /cm^3 Thermal Evaporation TTV <10 micronsGaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 2" dia x 0. 35mm Polishing: one side polished Doping: Zn doped Conductor type: S C P Carrier Concentration: (2. 67 3. 27) x 10^18 cm^3 Mobility: 116 125 cm^2 V. S EPD: <5000 cm^2 Resistivity: (1. 64 1. 88)x10^ 2 ohm. cm Ra(Average Roughness) : < 0. 4 nm Note: EPI ready wafers Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces