GaN Template on Sapphire(0001) 2"x 0.5mm,1sp ,GaN Film: 20um ,Semi-insulated--Research Grade CIP 25micron) 1 pc

25micron) 1 pc

and milling sintered ceramic samples up to 0

4 pcs per pack

Thin Film from A-Z

50ml Stainless Steel mixing container for Bench-top V-Shape Ball Grinding & Mixing Machine MSK-SFM-11

GaN Template on Sapphire(0001) 2"x 0.5mm,1sp ,GaN Film: 20um ,Semi-insulated--Research Grade CIP 25micron) 1 pcGaN Template on saphhire is made by a hydride vapor phase epitaxy (HVPE) based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template is a cost effective way to replace GaN single crystal substrate. Specifications Research Grade Sizes 2 Round Dimensions 50mm + 2mm Substrate Sapphire, Orientation c axis (0001) + 1. 0 o Conduction Type: n type, Resistivity > 1E6 Ohm cm Front