US$ 525.00
2" dia. InGaAs Film on InP (SI) (100) Deposited by MOCVD, 2" dia x0.35mm,2sp,Film:500 nm Mixers & Mills Temperature Control & Heaters
$1321.92
Description
Temperature Control & Heaters
DEmo Video How to make cylindral cell
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5 +/- 1 mm) O
installation sequence
2" dia. InGaAs Film on InP (SI) (100) Deposited by MOCVD, 2" dia x0.35mm,2sp,Film:500 nm Mixers & Mills Temperature Control & Heaters2" dia. wafer InGaAs film on InP (Semi insulating)(100) by MOCVD deposition Substrate: InP Orientation: (100) Doped with Fe, Semi Insulating Wafer size: 2" diameter x 0. 35 mm Resistivity:>1x10^7 ohm. cm Both sides polished EPI Film : N type InGaAs(Si doped), (100) Nc>2x10^18 cc Film Thickness : 0. 5 um (+ 20%) Roughness of epi layer is close to 1 mono layer (ML) One the back side we can expect some deposits and we can't guarantee the same quality
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