GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated 2"D x0.5 mm, 2SP, Mechanical Grade In

GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated 2"D x0.5 mm, 2SP, Mechanical Grade InGaAs single crystal wafer,Mechanical Grade Growing Method: VGF Orientation: (100) Size: 2" dia x 0. 5mm Polishing: two sides polished NOT EPI Ready wafer Doping: undoped Conductor type: Semi Insulating Resistivity: N A Mobility: N A EPD: N A Primary Flat: EJ(0 1 1) Primary Flat Length: 17 + 1 mm Secondary Flat: EJ(0 11) Secondary Flat Length: 7 + 1 mm Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces

025 mm ( thickness)

Doping: un-doped

Construction

4 x106 /cm3

sapphire wafer is being used extensively as a substrate for III-V nitrides and magnetic epitaxial films due to its better lattice mismatch

):    109 - 1011

Resistivity: N/A

Gasket 2: 62 x 50 x 5 mm (OD x ID x W)

and other artworks

Power AC 110V and 208-240V (50/60Hz) switchable for worldwide operation

Single-point PID temperature controller

Volume     70mL