Ge Substrate: (100) 10x5 x 0.5 mm , 2SP, N type Sb doped,R:0.01-0.05 Ohm.cm Bi4Ge3O12(BGO12) Update: Since Apr

Update: Since Apr

(optional) 100T Manual  100T Electric     200T Electric

Gold layer thickness: 50nm (+/- 5nm)

Customized size asseambling is available upon request

94mm Flatness   = 0

Ge Substrate: (100) 10x5 x 0.5 mm , 2SP, N type Sb doped,R:0.01-0.05 Ohm.cm Bi4Ge3O12(BGO12) Update: Since AprGe Wafer Specification Growing Method: CZ Wafer Size: 10x5 x0. 5 mm Surface Polishing: two sides epi polished Orientation: (100) Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Sb doped Conductor type: N type Resistivity: 0. 01 0. 05 Ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other