Si wafer (111) 3 " dia x 0.5 mm, 1sp P type, B doped, resistivity: 1-10 ohm-cm - SIBc76D05C1R1 Fe2O3 Modle EQ-Die-20D Die Sleeve Height

Modle EQ-Die-20D Die Sleeve Height 2" (50 mm) Diameter Sleeve ID

look for GHS elements of pictograms

MTI has been granted the patent 2016205320316 for the Pressure Controlled Split Pouch Cells - EQ-PSPC since June 2016

Polishing: Silicon face EPI- polished

NRTL certification is available upon request at the extra cost

Si wafer (111) 3 " dia x 0.5 mm, 1sp P type, B doped, resistivity: 1-10 ohm-cm - SIBc76D05C1R1 Fe2O3 Modle EQ-Die-20D Die Sleeve HeightSingle crystal Si Conductivity: P type ( B doped) Resistivity: 1~10 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 3" diameter x 0. 5 mm Orientation: <111> with secondary orientation flat <110> Polish: One side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner