InAs (511), S doped ellipse shape wafer (area >30mm dia) 1sp - IAS511ellipes Two Dimensional Crystal Sapphire (single crystal of Al2O3

Sapphire (single crystal of Al2O3 ) is being used extensively as a substrate for III-V nitrides and for many other epitaxial films

uniform temperature zone

Revealing High Na-Content P2-Type Layered Oxides as Advanced Sodium-Ion Cathodes

It was widely used for various kinds of batteries

which will keep the milling jar's temperature below 30°C

InAs (511), S doped ellipse shape wafer (area >30mm dia) 1sp - IAS511ellipes Two Dimensional Crystal Sapphire (single crystal of Al2O3Growth method LEC Orientation (511) 0. 5 Deg Orientation Flat N A Doping S doped Conductivity type N type Carrier Concentration <7E17 ~ 1E18 cm3 Mobility >10000 cm2 V. S EPD <2E4 cm 2 Standard thickness 500 20 mm Size ellipse shape, (area > 30mm diameter) Polish one side