Si Single Crystal Substrate, Undoped (100), 2"diax 1.0mm 1sp, R>10000 ohm.cm - SiUa50D10C1R10000 Conductive Ceramic Substrates EPD ( / cm^2) <

EPD ( / cm^2)                                          < 200

It can be pressed tightly by two layers of high-elastic film and suspended in the middle of the carrier

Lithium Air

we could add a height limit for the fume hood

We suggest cutting the sample along with the included dressing stone (Glue sample and the dressing stone side by side and cut them together

Si Single Crystal Substrate, Undoped (100), 2"diax 1.0mm 1sp, R>10000 ohm.cm - SiUa50D10C1R10000 Conductive Ceramic Substrates EPD ( / cm^2) <Single crystal Si Conductive type: Undoped Resistivity: > 1000 ohm cm Size: 2" diameter x 0. 5 mm Orientation: (100) Polish: one side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater