GaAs Wafer, Growing Method: VGF, (100) undoped Semi-Insulated 2"D x0.5 mm, 1SP Pellet Presses

GaAs Wafer, Growing Method: VGF, (100) undoped Semi-Insulated 2"D x0.5 mm, 1SP Pellet PressesGaAs single crystal wafer Growing Method: VGF Orientation: (100)+ 0. 5 degree Size: 2" dia x 0. 5mm Polishing: single side polished Doping: un doped Conductor type: Semi insulating Ra(Average Roughness) : < 0. 4 nm Mobility: 4470 6540 cm^2 V. S Resistivity: (0. 96 5. 34) x 10^8 ohm. cm EPD: <5000cm^2 EPI ready surface and packing Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces

Boosting the interfacial superionic conduction of halide solid electrolytes for all-solid-state batteries

Precision metering valves of stainless steel valves permits precise flow adjustments

Conductive Graphite is used as conductive material when preparing Li-ion battery Cathode and Anode

1600°C ( in air) continuous

Warning: The time for Screen and Sleep should be set to "NEVER" in the Power& Sleep setting of your computer to avoid causing disconnection from the battery analyzer

Wafer Size:                  5x5x0

and the latest version testing software are installed and calibrated for immediate use (Up to 20 sets of analyzers can be simultaneously controlled by one PC)

All pressing dies are made of high-stretched carbon steel to achieve high hardness to meet the essential requirements of making ceramic or metal samples

ID:      82 mm

BN Film coated by sputtering method

Orientation:                      (100)+/-0

The customer can easily combine up to 10 battery analyzers (0