+ 0. 5 Dimension: 1 4"x 1 4" x 0. 26 + 0. 03 mm Polished: Two sides epi polished Surface Roughness: < 10 A by AFM Typical Properties of Single Crystal SiC Formula weight: 40. 10 Unit Cell: Hexagonal Lattice constant: a =3. 08 A c = 15. 117 A Stacking sequence: ABCACB (6H) Growth Technique: MOCVD Polishing : Silicon face polished Band Gap: 3. 03 eV ( Indirect) Conductivity type: N TTV Bow Warp:<25 um"> + 0. 5 Dimension: 1 4"x 1 4" x 0. 26 + 0. 03 mm Polished: Two sides epi polished Surface Roughness: < 10 A by AFM Typical Properties of Single Crystal SiC Formula weight: 40. 10 Unit Cell: Hexagonal Lattice constant: a =3. 08 A c = 15. 117 A Stacking sequence: ABCACB (6H) Growth Technique: MOCVD Polishing : Silicon face polished Band Gap: 3. 03 eV ( Indirect) Conductivity type: N TTV Bow Warp:<25 um"> + 0. 5 Dimension: 1 4"x 1 4" x 0. 26 + 0. 03 mm Polished: Two sides epi polished Surface Roughness: < 10 A by AFM Typical Properties of Single Crystal SiC Formula weight: 40. 10 Unit Cell: Hexagonal Lattice constant: a =3. 08 A c = 15. 117 A Stacking sequence: ABCACB (6H) Growth Technique: MOCVD Polishing : Silicon face polished Band Gap: 3. 03 eV ( Indirect) Conductivity type: N TTV Bow Warp:<25 um"> SiC - 6H (0001), 1/4"x1/4"x0.26 mm , two sides polished Y Nickel Metallic Film – vastrahamnen.se

New Arrivals are Here-Fast Shipping from Our USA Warehouse

SiC - 6H (0001), 1/4"x1/4"x0.26 mm , two sides polished Y Nickel Metallic Film

$106.88

Quantity
Description

Nickel Metallic Film

Please click the picture below to see XRD and particle distribution curve

Various graphs and curves can be created by software based on user definition

Se-KTQ-150

Polishing:                       One  side polished

SiC - 6H (0001), 1/4"x1/4"x0.26 mm , two sides polished Y Nickel Metallic FilmSpecifications of Substrate Orientation: <0001> + 0. 5 Dimension: 1 4"x 1 4" x 0. 26 + 0. 03 mm Polished: Two sides epi polished Surface Roughness: < 10 A by AFM Typical Properties of Single Crystal SiC Formula weight: 40. 10 Unit Cell: Hexagonal Lattice constant: a =3. 08 A c = 15. 117 A Stacking sequence: ABCACB (6H) Growth Technique: MOCVD Polishing : Silicon face polished Band Gap: 3. 03 eV ( Indirect) Conductivity type: N TTV Bow Warp:<25 um

Shipping Notes
  • Free Standard Shipping on $100+ Orders to the USA.
  • Except Preorder products are shipped in 48 hours.
  • Delivery to the USA:
  1. Standard Shipping : 3-10 business days
  • If time is of the essence, please consider selecting expedited delivery for faster service.

View More

  • Product more
  • Collection:

You may also like

recommand products

50$ Store Credit
Your message