M02100 - SEMI M21 - カーテシアン(デカルト)アレイにおける方形エレメントへの割当アドレスのガイド Revision:SEMI M21-1110 - Superseded SEMI G4-89 (technical revision)
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Description
SEMI G4-89 (technical revision)
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本試験方法の目的は,MFCに関わる取付姿勢の影響を定量化する標準方法を提供することである。
poly-Si or low temperature oxide (LTO)
This Guide provides guidance for the technical foundation of the SEMI Computer Integrated Manufacturing (CIM) Framework Standards
M02100 - SEMI M21 - カーテシアン(デカルト)アレイにおける方形エレメントへの割当アドレスのガイド Revision:SEMI M21-1110 - Superseded SEMI G4-89 (technical revision)global Silicon Wafer Committee2010827 global Audits & Reviews Subcommittee201010www. semi. org199220043 Referenced SEMI Standards SEMI M1 Specifications for Polished Single Crystal Silicon Wafers SEMI M17 Guide for a Universal Wafer Grid SEMI M20 Practice for Establishing a Wafer Coordinate System SEMI M59 Terminology of Silicon Technology
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