M08800 - SEMI M88 - Practice for Sample Preparation Methods for Measuring Minority Carrier Diffusion Length in Silicon Wafers by Surface Photovoltage Methods Revision:SEMI M88-0119 - Current This marking symbol is marked

This marking symbol is marked in a manner and location to avoid affecting the user patterning process

It includes a specific transfer command state model and stocker controller state model as the basis for all equipment of this class

it has been replaced by SEMI C71

This Test Method is particularly applicable to clean

SEMI E1-0697 (technical revision)

M08800 - SEMI M88 - Practice for Sample Preparation Methods for Measuring Minority Carrier Diffusion Length in Silicon Wafers by Surface Photovoltage Methods Revision:SEMI M88-0119 - Current This marking symbol is markedShrinkage and advanced integration of semiconductor components demand lower metal contamination levels in component fabrication processes and in base silicon wafer substrates. The industry has for some time widely employed surface photovoltage (SPV) measurements of minority carrier diffusion lengths as a technique to assess metal impurities in silicon wafers. Samples, however, often require surface preparation prior to SPV measurements because SPV