MF011000 - SEMI MF110 - Test Method for Thickness of Epitaxial or Diffused Layers in Silicon by the Angle Lapping and Staining Technique Revision:SEMI MF110-1107 (Reapproved 0718) - Superseded 2 This standard specifies procedures

2 This standard specifies procedures to measure extractable metal impurities from perfluoroalkoxy alkane (PFA) and other fluorinated materials and from high purity liquid distribution components

but not limited to

This Standard provides guidance for development and delivery of training supplied without using dedicated training equipment

FOBIT or open cassette using automated methods

Originally published December 1996

MF011000 - SEMI MF110 - Test Method for Thickness of Epitaxial or Diffused Layers in Silicon by the Angle Lapping and Staining Technique Revision:SEMI MF110-1107 (Reapproved 0718) - Superseded 2 This standard specifies proceduresThis Test Method covers a procedure suitable for interlaboratory comparisons of layer thickness. This Test Method is applicable for layers of any resistivity so long as the layer differs from the silicon substrate under it either in conductivity type or by at least one order of magnitude in resistivity. The method described is destructive in nature but is more widely applicable than the alternative infrared method, SEMI MF95. For layers with