M05100 - SEMI M51 - Test Method for Characterizing Silicon Wafer by Gate Oxide Integrity StdTpc-Silicon Materials & Process Control which may be integrated circuit

which may be integrated circuit (IC) wafers and devices

but are not limited to:

It is not intended to specify wafers used in process development or for technology-specific circuit-quality applications

suppliers responded by introducing products with improved analytical characterization

and density of defects counted by this Test Method may be related to the crystal growth process

M05100 - SEMI M51 - Test Method for Characterizing Silicon Wafer by Gate Oxide Integrity StdTpc-Silicon Materials & Process Control which may be integrated circuitThis Standard was technically approved by the global Silicon Wafer Technical Committee. This edition was approved for publication by the global Audits and Reviews Subcommittee on August 30, 2012. Available at www. semiviews. org and www. semi. org in October 2012; originally published July 2002; previously published March 2003. NOTICE: This Document was completely rewritten in 2012. This Test Method describes procedures for characterizing silicon