M06400 - SEMI M64 - 赤外線吸収スペクトル法による絶縁（SI）ガリウムヒ素単結晶内のEL2深いドナー濃度の試験方法 StdTpc-Gases - Process or metal-metal (e

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or metal-metal (e

SEMI C34-0699 (first published - replaces SEMI C2

org in November 2014

It is the responsibility of the users of the Documents to establish appropriate safety and health practices

This Test Method covers the determination of total oxygen concentration in the bulk of single crystal silicon substrates using SIMS

M06400 - SEMI M64 - 赤外線吸収スペクトル法による絶縁（SI）ガリウムヒ素単結晶内のEL2深いドナー濃度の試験方法 StdTpc-Gases - Process or metal-metal (eglobal Compound Semiconductor Committee20051129global Audits and Reviews Subcommittee20061www. semi. org20063CD ROM SI GaAsEL2 Referenced SEMI Standards SEMI M39 Test Method for Measuring Resistivity and Hall Coefficient and Determining Hall Mobility in Semi Insulating GaAs Single Crystals

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